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PDF MRF7S16150HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF7S16150HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• T4Pyobpuuticr=satl3sW2, 7WiMMaAtHtXszPACevhrgaf.o,nrfnm=eal1nB6ca0en0:dVawDniDddt=h1,62I6n80pVuMotlHStszi,g,In8Da0Ql2P=.1A16R5d0,=0694m.5QAdA, BM@3/40,.01%
Probability on CCDF.
Power Gain — 19.7 dB
Drain Efficiency — 25.4%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW
Output Power
• Pout @ 1 dB Compression Point w 150 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S16150H
Rev. 1, 12/2008
MRF7S16150HR3
MRF7S16150HSR3
1600- 1660 MHz, 32 W AVG., 28 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S16150HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S16150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 149 W CW
Case Temperature 75°C, 32 W CW
RθJC
0.34
0.37
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
1
1 page  
www.DataSheet4U.com
B1 R2
R1
C3
C2
C1
C4
C6
C5
C7
C8
C9
C10
Figure 2. MRF7S16150HR3(HSR3) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
5
5 Page 
PRODUCT DOCUMENTATION
www.DataSheet4U.com
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
June 2007
Dec. 2008
Description
• Initial Release of Data Sheet
• Table 4, On Characteristics, tightened VGS(Q) max value from 3.8 to 3.5 to match production test value, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Updated Fig. 13, OFDM 802.16d Test Signal, to show input signal only, p. 8
• Updated Fig. 14, WiMAX Spectrum Mask Specifications, to more accurately represent the WiMAX
spectrum, p. 8
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
11
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| PDF Descargar | [ Datasheet MRF7S16150HR3.PDF ] | |
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