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PDF MRF7S19120NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF7S19120NR1 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 120 W CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF7S19120N
Rev. 0, 9/2007
MRF7S19120NR1
1930 - 1990 MHz, 36 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 1730 - 02
TO - 270 WBL - 4
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 120 W CW
Case Temperature 80°C, 36 W CW
RθJC
0.43
0.51
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
1
1 page  
www.DataSheet4U.com
R1
C2
R2
C1
C7
C3
R3
MRF7S19120N Rev. 3
C4
C5 C6
C8
C10 C11
C9
Figure 2. MRF7S19120NR1 Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
5
5 Page 
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RF Device Data
Freescale Semiconductor
MRF7S19120NR1
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MRF7S19120NR1.PDF ] | |
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