PDF MRF7S18125AHR3 Data sheet ( Hoja de datos )

Número de pieza	MRF7S18125AHR3
Descripción	RF Power Field Effect Transistors
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application • T1y2p5icWaal GttsSCMWP,efr=fo1rm88a0ncMeH: Vz.DD = 28 Volts, IDQ = 1100 mA, Pout = Power Gain — 17 dB Drain Efficiency — 55% GSM EDGE Application • TPyoPputioc=wal5eG7r GSWMaaintEts—DAGv1Eg7.P,dFBeurflol rFmreaqnuceen: cVyDBDa=nd28(1V8o0lt5s-, 1ID8Q80=M11H0z0).mA, Drain Efficiency — 38% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM — 1.75% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF7S18125AH Rev. 0, 11/2008 MRF7S18125AHR3 MRF7S18125AHSR3 1805- 1880 MHz, 125 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S18125AHR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S18125AHSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics VDSS VGS VDD Tstg TC TJ - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Vdc Vdc Vdc °C °C °C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 80°C, 71 W CW RθJC 0.31 0.34 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF7S18125AHR3 MRF7S18125AHSR3 1 1 page www.DataSheet4U.com R1 VGS R2 C1 C8 R3 C7 C12 VDD C9 C2 C3 C6 C13 C14 C15 C10 C11 C4 C5 MRF7S18125AH Rev. 0 Figure 2. MRF7S18125AHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor MRF7S18125AHR3 MRF7S18125AHSR3 5 5 Page www.DataSheet4U.com ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 61 60 P6dB = 53.68 dBm (233.3 W) 59 P3dB = 53.07 dBm (202.7 W) 58 57 Ideal 56 P1dB = 52.105 dBm 55 (162.4 W) 54 53 Actual 52 51 50 VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f =1840 MHz 49 30 31 32 33 34 35 36 37 38 39 40 41 42 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω Zload Ω P1dB 0.60 - j2.81 1.05 - j2.36 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V RF Device Data Freescale Semiconductor MRF7S18125AHR3 MRF7S18125AHSR3 11 11 Page

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