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PDF MRF18085AR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF18085AR3 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18085A/D
www.DataSheet4U.com
The RF MOSFET Line
MRF18085A
RF Power Field Effect Transistors MRF18085AR3
N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier
amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and
WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band
(1805–1880 MHz)
Power Gain – 15 dB (Typ) @ 85 Watts CW
Efficiency – 52% (Typ) @ 85 Watts CW
GSM/GSM EDGE
1.8 – 1.88 GHz, 85 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465–06, STYLE 1
NI–780
MRF18085A, MRF18085AR3
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
CASE 465A–06, STYLE 1
NI–780S
MRF18085ALSR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
273
1.56
–65 to +200
200
Max
0.64
Class
1 (Typical)
M3 (Typical)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3
1
1 page  
www.DataSheet4U.com
f = 1710 MHz
Zo = 10 Ω
Zsource
f = 1710 MHz
f = 1990 MHz
Zload
f = 1990 MHz
VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW
f
MHz
Zsource
Ω
Zload
Ω
1710
1785
1.13 + j3.62
1.61 + j4.23
1.79 + j2.88
1.82 + j3.15
1805
1880
1930
1960
1.69 + j4.34
2.83 + j5.25
3.00 + j5.18
4.39 + j4.97
1.90 + j2.66
2.09 + j2.77
2.01 + j2.44
2.01 + j2.57
1990
6.59 + j4.74
1.79 + j2.37
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z source
Z load
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18085AR3.PDF ] | |
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