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PDF LMH2100 Data sheet ( Hoja de datos )
| Número de pieza | LMH2100 | |
| Descripción | 50 MHz to 4 GHz 40 dB Logarithmic Power Detector | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
November 28, 2007
LMH2100
50 MHz to 4 GHz 40 dB Logarithmic Power Detector for
CDMA and WCDMA
General Description
The LMH2100 is a 40 dB RF power detector intended for use
in CDMA and WCDMA applications. The device has an RF
frequency range from 50 MHz to 4 GHz. It provides an accu-
rate temperature and supply compensated output voltage that
relates linearly to the RF input power in dBm. The circuit op-
erates with a single supply from 2.7V to 3.3V.
The LMH2100 has an RF power detection range from −45
dBm to −5 dBm and is ideally suited for direct use in combi-
nation with a 30 dB directional coupler. Additional low-pass
filtering of the output signal can be realized by means of an
external resistor and capacitor. Figure (a) shows a detector
with an additional output low pass filter. The filter frequency
is set with RS and CS.
Figure (b) shows a detector with an additional feedback low
pass filter. Resistor RP is optional and will lower the Trans
impedance gain (RTRANS). The filter frequency is set with
CP//CTRANS and RP//RTRANS.
The device is active for Enable = High, otherwise it is in a low
power consumption shutdown mode. To save power and pre-
vent discharge of an external filter capacitance, the output
(OUT) is high-impedance during shutdown.
The LMH2100 power detector is offered in the small 0.4 mm
pitch micro SMD package.
Features
■ 40 dB linear in dB power detection range
■ Output voltage range 0.3 to 2V
■ Shutdown
■ Multi-band operation from 50 MHz to 4 GHz
■ 0.5 dB accurate temperature compensation
■ External configurable output filter bandwidth
■ 0.4 mm-pitch micro SMD package
Applications
■ UMTS/CDMA/WCDMA RF power control
■ GSM/GPRS RF power control
■ PA modules
■ IEEE 802.11b, g (WLAN)
Typical Application
30014071
(a) LMH2100 with Output RC Low Pass Filter
30014004
(b) LMH2100 with Feedback (R)C Low Pass Filter
© 2007 National Semiconductor Corporation 300140
www.national.com
1 page  
Symbol
Parameter
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ST Temperature Sensitivity
−40°C < TA < 25°C, (Note 8)
PIN = −10 dBm
ST Temperature Sensitivity
25°C < TA < 85°C, (Note 8)
PIN = −10 dBm
PMAX
Maximum Input Power for
ELC = 1 dB(Note 8)
PMIN
Minimum Input Power for
ELC = 1 dB (Note 8)
DR Dynamic Range for ELC = 1 dB
(Note 8)
Condition
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
f = 4000 MHz
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
f = 4000 MHz
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
f = 4000 MHz
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
f = 4000 MHz
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
f = 4000 MHz
Min
(Note 6)
-5.4
0.3
-3.1
-1.6
0.9
2.5
2.7
-10.5
-10.5
-11.3
-10.6
-11.2
-12.9
-17.8
-9.2
-10.5
-8.2
-7.3
-6.3
-6.9
-11.1
29.5
33.3
34.2
34.1
33.4
28.5
22.7
Typ
(Note 7)
-7.4
-8.6
-6.5
-5.6
-4.4
-1.9
-7.2
-38.9
-43.1
-42.2
-40.6
-38.7
-35.9
-33.5
31.6
35.2
36.5
36.1
35.5
35.1
26.3
Max
(Note 6)
8.6
14.5
11.0
13.6
15.8
16.9
17.3
0.5
2.6
3.3
5.4
6.1
4.4
-1.1
-38.1
-42.3
-41.0
-38.9
-37.0
-34.7
-32.0
Units
mdB/°C
mdB/°C
dBm
dBm
dB
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, applicable std. MIL-STD-883, Method 3015.7. Machine model, applicable std. JESD22–A115–A (ESD MM std of JEDEC). Field-
Induced Charge-Device Model, applicable std. JESD22–C101–C. (ESD FICDM std. of JEDEC)
Note 3: The maximum power dissipation is a function of TJ(MAX) , θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where
TJ > TA.
Note 5: Power in dBV = dBm + 13 when the impedance is 50Ω.
Note 6: All limits are guaranteed by design or statistical analysis.
Note 7: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 8: All limits are guaranteed by design and measurements which are performed on a limited number of samples. Limits represent the mean ±3–sigma values.
The typical value represents the statistical mean value.
Note 9: This parameter is guaranteed by design and/or characterization and is not tested in production.
5 www.national.com
5 Page 
www.DataSheet4MUe.RcaoFnmITnepmutpPeroawtuerreaDt r3i0ft0E0rMroHrzvs.
Mean Temperature Drift Error vs.
RF Input Power at 3500 MHz
30014024
Mean Temperature Drift Error vs.
RF Input Power at 4000 MHz
30014025
Temperature Drift Error (Mean ±3 sigma) vs.
RF Input Power at 50 MHz
300140a1
Temperature Drift Error (Mean ±3 sigma) vs.
RF Input Power at 900 MHz
30014050
Temperature Drift Error (Mean ±3 sigma) vs.
RF Input Power at 1855 MHz
30014051
11
30014052
www.national.com
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| Páginas | Total 32 Páginas | |
| PDF Descargar | [ Datasheet LMH2100.PDF ] | |
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