PDF MRF19060LR3 Data sheet ( Hoja de datos )

Número de pieza	MRF19060LR3
Descripción	RF Power Field Effect Transistors
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier www.datasahpepeltic4au.tcioonms. • Typical CDMA Performance: 1960 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB Adjacent Channel Power — 885 kHz: - 47 dBc @ 30 kHz BW 1.25 MHz: - 55 dBc @ 12.5 kHz BW 2.25 MHz: - 55 dBc @ 1 MHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. Document Number: MRF19060 Rev. 9, 5/2006 MRF19060LR3 MRF19060LSR3 1930- 1990 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19060LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Symbol VDSS VGS PD Tstg TC TJ Symbol RθJC Value - 0.5, +65 - 0.5, +15 180 1.03 - 65 to +150 150 200 Value 0.97 Class 1 (Minimum) M3 (Minimum) Unit Vdc Vdc W W/°C °C °C °C Unit °C/W © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF19060LR3 MRF19060LSR3 1 1 page TYPICAL CHARACTERISTICS 40 0 35 η −5 30 25 IRL www.datas2h0eet4PVuDouD.tc==o62m06 Vdc W (PEP), IDQ = 500 mA 15 Two−Tone Measurement, 100 kHz Tone Spacing 10 Gps 5 IMD −10 −15 −20 −25 −30 −35 0 −40 1900 1920 1940 1960 1980 2000 2020 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance 45 VDD = 26 Vdc 40 IDQ = 700 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 35 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 30 2.25 MHz 25 885 kHz 20 1.25 MHz 15 η Gps 10 CDMA 9 Channels Forward Pilot:0, Paging:1, Traffic:8−13, Sync:32 5 4 8 12 16 Pout, OUTPUT POWER (WATTS Avg.) CDMA Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power −20 −30 −40 −50 −60 −70 −80 −90 −100 20 −25 VDD = 26 Vdc −30 f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −35 −40 900 mA −45 −50 700 mA −55 500 mA −60 −65 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power 100 14 900 mA 13 700 mA 12 500 mA 11 VDD = 26 Vdc f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing 10 0.1 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power RF Device Data Freescale Semiconductor −20 VDD = 26 Vdc −30 IDQ = 700 mA, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −40 3rd Order −50 −60 5th Order 7th Order −70 −80 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Products versus Output Power 100 13.5 13 12.5 12 11.5 22 Pout = 60 W (PEP), IDQ = 500 mA f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −22 −24 −26 −28 Gps −30 −32 IMD −34 −36 −38 24 26 28 30 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF19060LR3 MRF19060LSR3 5 5 Page

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