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PDF CMBT857 Data sheet ( Hoja de datos )
| Número de pieza | CMBT857 | |
| Descripción | TRANSISTORS | |
| Fabricantes | CDIL | |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR 3
1
CMBT857
SOT23
MARKING: AS BELOW
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
60
Collector -Emitter Voltage
VCEO
50
Emitter Base Voltage
VEBO
6.0
Collector Current
IC
200
Collector Power Dissipation
PC
200
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55 to +125
ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector -Emitter Voltage
VCEO IC=100uA, IB=0
50 -
Collector Cut off Current
ICBO VCB=60V, IE=0
--
Emitter Cut off Current
IEBO VEB=6V, IC=0
--
DC Current Gain
hFE(1) IC=1mA,VCE=6V
150 -
hFE(2) IC=0.1mA,VCE=6V
90 -
Collector Emitter Saturation Voltage
VCE(Sat) IC=100mA,IB=10mA
--
Base Emitter Saturation Voltage
VBE(Sat) IC=100mA,IB=10mA
--
Dynamic Characteristics
Transition Frequency
ft VCE=6V,IC=10mA,
- 200
Collector Output Capacitance
Cob VCB=6V, IE=0
- 4.0
f=1MHz
Noise Figure
NF VCE=6V, IE=0.3mA
--
f=100Hz, Rg=10kohms
CLASSIFICATION
EF
hFE(1)
150-300
250-500
MARKING
PE PF
MAX
-
100
100
500
-
0.30
1.0
-
-
20
UNIT
V
V
V
mA
mW
deg C
deg C
UNIT
V
nA
nA
V
V
MHz
pF
dB
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CMBT857.PDF ] | |
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