(PDF) CMBT2369 Datasheet - SILICON PLANAR EPITAXIAL TRANSISTORS

Número de pieza	CMBT2369
Descripción	SILICON PLANAR EPITAXIAL TRANSISTORS
Fabricantes	CDIL
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No Preview Available ! www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c. value) Total power dissipation up to Tamb = 25 °C D.C. current gain IC = 10mA; VCE = 1 V IC = 100 mA; VCE = 2 V Storage time ICon = IBon = IBoff = 10 mA VCB0 VCES VCE0 IC Ptot hFE hFE ts max. max. max. max. max. 40 V 40 V 15 V 500 mA 250 mW 40 to 120 > 20 < 13 ns Continental Device India Limited Data Sheet Page 1 of 3 1 page

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PDF CMBT2369 Data sheet ( Hoja de datos )