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PDF STR4A60 Data sheet ( Hoja de datos )
| Número de pieza | STR4A60 | |
| Descripción | Bi-Directional Triode Thyristor | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ High Commutation dv/dt
General Description
This device is new surface mounted package line up suitable
for space limited application such as low power AC switching
applications, such as fan speed, small light controllers and
home appliance equipment.
STR4A60
Symbol
○ 2.T2
▼▲
○ 3.Gate
1.T1 ○
TO-126
3
2
1
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
TC = 95 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Ratings
600
4.0
30/33
4.5
1.5
0.1
1
7.0
- 40 ~ 125
- 40 ~ 150
0.26
Units
V
A
A
A2s
W
W
A
V
°C
°C
g
Jun, 2003. Rev. 3
copyright@SemiWell Semiconductor Co., LTd., All rights reserved.
1/6
1 page  
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STR4A60
TO-126 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 7.5
7.9 0.295
0.311
B 10.8
11.2 0.425
0.441
C 14.2
14.7 0.559
0.579
D 2.7
2.9 0.106
0.114
E 3.8
0.150
F 2.5
0.098
G 1.2
1.5 0.047
0.059
H 2.3
0.091
I 4.6
0.181
J 0.48
0.62 0.019
0.024
K 0.7
0.86 0.028
0.034
L 1.4
0.055
φ 3.2
0.126
B
F
C
A
E
φ
3
2
1
D
G
H
I
JK
L
1. Gate
2. T2
3. T1
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STR4A60.PDF ] | |
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