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Número de pieza | SPP80N04S2L-03 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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Preliminary data
SPP80N04S2L-03
SPB80N04S2L-03
OptiMOS =Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
•=175°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
VDS 40 V
RDS(on) max. SMD version 3.1 mΩ
ID 80 A
P-TO263-3-2
P-TO220-3-1
Type
SPP80N04S2L-03
SPB80N04S2L-03
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4261
Q67040-S4262
Marking
2N04L03
2N04L03
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C, 1)
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID
ID puls
EAS
EAR
dv/dt
IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
80
80
320
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-06-25
1 page www.DataSheet4U.com
Preliminary data
SPP80N04S2L-03
SPB80N04S2L-03
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N04S2L-03
Ptot = 300W
Ah
gf
160
140
120
100
80
VGS [V]
ea
2.8
b 3.0
c 3.2
d 3.5
e 3.8
f 4.0
d g 4.5
h 10.0
60 c
40
b
20
a
00 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
12 SPP80N04S2L-03
mΩ
c
10
de
9
8
7
6
5f
4g
3h
2
VGS [V] =
1
cdef
3.2 3.5 3.8 4.0
gh
4.5 10.0
00 20 40 60 80 100 120 140 A 180
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
320
A
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
220
S
180
240 160
200 140
120
160
100
120 80
80 60
40
40
20
00 1 2 3 4 V 6
VGS
00 40 80 120 160 A 220
ID
Page 5
2001-06-25
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPP80N04S2L-03.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPP80N04S2L-03 | Power-Transistor | Infineon Technologies |
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