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PDF TP36N06 Data sheet ( Hoja de datos )
| Número de pieza | TP36N06 | |
| Descripción | STP36N06 | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TP36N06 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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STP36N06
STP36N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
w.DaTYPE
w STP36N06
w STP36N06FI
VDSS
60 V
60 V
RDS(on)
< 0.04 Ω
< 0.04 Ω
ID
36 A
21 A
s TYPICAL RDS(on) = 0.03 Ω
s AVALANCHE RUGGED TECHNOLOGY
ms 100% AVALANCHE TESTED
os REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
.cs HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
UCHARACTERIZATION
t4APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
es SOLENOID AND RELAY DRIVERS
s REGULATORS
es DC-DC & DC-AC CONVERTERS
hs MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
SABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ataABSOLUTE MAXIMUM RATINGS
.DSymbol
Parameter
wVDS
VDGR
wVGS
wID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Value
STP36N06
STP36N06FI
60
60
± 20
36 21
Unit
V
V
V
A
ID Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
25 14
om144 144
.c120 40
U0.8 0.27
t4 2000
ee-65 to 175
www.DataSh175
A
A
W
W/oC
V
oC
oC
1/10
1 page  
www.DataSheet4U.com
Transconductance
STP36N06/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TP36N06.PDF ] | |
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