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PDF STB40NF10L Data sheet ( Hoja de datos )
| Número de pieza | STB40NF10L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB40NF10L
N-CHANNEL 100V - 0.028Ω - 40A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB40NF10L
100 V < 0.033 Ω 40 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.028Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
1
D2PAK
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
s AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2001
Value
100
100
± 15
40
25
160
150
1
430
–65 to 175
175
(1) Starting Tj = 25°C, ID = 20A, VDD = 40V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
1/9
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STB40NF10L
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
Normalized Drain-Source Breakdown vs
Temperature
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STB40NF10L.PDF ] | |
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