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PDF STB4NK60Z-1 Data sheet ( Hoja de datos )
| Número de pieza | STB4NK60Z-1 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB4NK60Z, STB4NK60Z-1, STD4NK60Z
STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET
DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
Features
Type
STB4NK60Z
STB4NK60Z-1
STD4NK60Z
STD4NK60Z-1
STP4NK60Z
STP4NK60ZFP
VDSS
600 V
600 V
600 V
600 V
600 V
600 V
RDS(on)
max
<2Ω
<2Ω
<2Ω
<2Ω
<2Ω
<2Ω
PW
70 W
70 W
70 W
70 W
70 W
25 W
■ 100% avalanche tested
■ Very low intrinsic capacitances
ID
4A
4A
4A
4A
4A
4A
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
3
2
1
TO-220
IPAK
3
2
1
3
1
DPAK
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB4NK60Z
B4NK60Z
STB4NK60Z-1
B4NK60Z
STD4NK60Z
D4NK60Z
STD4NK60Z-1
STP4NK60Z
D4NK60Z
P4NK60Z
STP4NK60ZFP
P4NK60ZFP
Package
D²PAK
I²PAK
DPAK
IPAK
TO-220
TO-220FP
April 2008
Rev 6
Packaging
Tape and reel
Tube
Tape and reel
Tube
Tube
Tube
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www.st.com
20
1 page  
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 4 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs
VDD = 24 V, Tj = 150 °C
(see Figure 19)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
4
16
1.6
400
1700
8.5
A
A
V
ns
nC
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO (1) Gate-source breakdown voltage Igs=± 1 mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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5 Page 
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.14
1.70 0.044
0.066
c 0.48
0.70 0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
F 1.23
1.32 0.048
0.051
H1 6.20
6.60 0.244
0.256
J1 2.40
2.72 0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93 0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85 0.147
0.151
Q 2.65
2.95 0.104
0.116
11/20
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| PDF Descargar | [ Datasheet STB4NK60Z-1.PDF ] | |
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