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PDF SFP50N06 Data sheet ( Hoja de datos )
| Número de pieza | SFP50N06 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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SemiWell Semiconductor
SFP50N06
Features
■ Low RDS(on) (0.023 Ω )@VGS=10V
■ Low Gate Charge (Typical 39nC)
www.DataSheet4U.com ■ Low Crss (Typical 110pF)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (175°C)
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
N-Channel MOSFET
Symbol
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalnche Current
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Value
60
50
35.2
200
±20
470
13
50
7
130
0.87
- 55 ~ 175
300
Thermal Characteristics
Symbol
Parameter
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
December, 2002. Rev. 1.
Min.
-
-
-
Value
Typ.
-
0.5
-
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Max.
1.15
-
62.5
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7
1 page  
SFP50N06
Fig. 12. Gate Charge Test Circuit & Waveforms
www.DataSheet4U.com
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
DUT
1mA
Fig 13. Switching Time Test Circuit & Waveforms
Qg
Qgd
Charge
VDS
10V
Pulse
Generator
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
VDD
DUT
EAS = --21--
LL IAS2
------B--V--D--S-S-------
BVDSS -- VDD
BVDSS
IAS
ID (t)
VDD
VDS (t)
t p Time
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SFP50N06.PDF ] | |
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