(PDF) SSM4226GM Datasheet - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Número de pieza	SSM4226GM
Descripción	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Fabricantes	Silicon Storage Technology
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No Preview Available ! SSM4226M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Simple drive requirement High VGS rating D2 D2 D1 D1 SO-8 G2 S2 G1 S1 www.DataSheet4DU.ceosm cription Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS R DS(ON) ID 30V 18mΩ 8.2A D1 G1 G2 S1 D2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 30 ± 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 62.5 Unit °C/W 8/06/2004 Rev.1.02 www.SiliconStandard.com 1 of 4 1 page

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PDF SSM4226GM Data sheet ( Hoja de datos )