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PDF AON3806 Data sheet ( Hoja de datos )
| Número de pieza | AON3806 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON3806
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON3806 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AON3806is Pb-
free (meets ROHS & Sony 259 specifications).
AON3806L is a Green Product ordering option.
AON3806 and AON3806L are electrically identical.
Features
VDS (V) = 20V
ID = 7.3 A (VGS = 10V)
RDS(ON) < 26mΩ (VGS = 4.5V)
RDS(ON) < 27mΩ (VGS = 4V)
RDS(ON) < 32mΩ (VGS = 2.5V)
ESD Rating: 2500V HBM
Top View
DFN 3x3
Bottom View
S2
G2
S1
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
D2
D2
D1 G1
D1
Maximum
20
±12
7.3
5.8
30
2.2
1.4
-55 to 150
D1
S1
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
43
77
36
Max
56
110
50
D2
G2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AON3806.PDF ] | |
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