|
|
Número de pieza | LMBT5550LT1 | |
Descripción | (LMBT5550LT1 / LMBT5551LT1) Transistors | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LMBT5550LT1 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
FEATURE
ƽPb-Free package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5550LT1
M1F
3000/Tape&Reel
LMBT5550LT1G
(Pb-Free)
www.DataSheet4U.com LMBT5551LT1
M1F
G1
3000/Tape&Reel
3000/Tape&Reel
LMBT5551LT1G
(Pb-Free)
G1
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
V CEO
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
LMBT5550LT1
LMBT5551LT1
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
LMBT5550
LMBT5551
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
LMBT5550
LMBT5551
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 100Vdc, I E = 0)
( V CB = 120Vdc, I E = 0)
( V CB = 100Vdc, I E = 0, T A=100 °C)
( V CB = 120Vdc, I E = 0, T A=100 °C)
Emitter Cutoff Current
LMBT5550
LMBT5551
LMBT5550
LMBT5551
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
Min
140
160
160
180
6.0
—
—
—
—
—
Max Unit
Vdc
—
—
Vdc
—
—
Vdc
—
100 nAdc
50
100 µAdc
50
50 nAdc
LMBT5550LT1–1/5
1 page www.DataSheet4U.com
V
A
L
3
BS
12
G
C
D
H
K
0.037
0.95
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1 LMBT5551LT1
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
LMBT5550LT1-5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet LMBT5550LT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
LMBT5550LT1 | (LMBT5550LT1 / LMBT5551LT1) Transistors | Leshan Radio Company |
LMBT5550LT1G | High Voltage Transistors | Leshan Radio Company |
LMBT5550LT3G | High Voltage Transistors | Leshan Radio Company |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |