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PDF BSP322P Data sheet ( Hoja de datos )
| Número de pieza | BSP322P | |
| Descripción | Small Signal Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP322P (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
BSP322P
-100 V
800 mΩ
-1 A
PG-SOT-223
Type
BSP322P
Package
PG-SOT-223
Tape and Reel Information
L6327: 1000 pcs/reel
Marking
BSP322P
Lead free
Yes
Packing
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
I D T C=25 °C
T C=70 °C
I D,pulse T C=25 °C
E AS I D=-1 A, R GS=25 Ω
V GS
P tot T C=25 °C
T j, T stg
JESD22-C101-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
1
0.8
4
57
±20
1.8
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
Unit
A
mJ
V
W
°C
Rev 1.02
page 1
2007-04-10
1 page  
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
4
-10 V
-5 V
-7 V
-4 V
3
-3.5 V
2
-3 V
1
0
0246
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
4
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
1.6
-3 V
1.4 -3.5 V
1.2
BSP322P
-4 V
1
0.8 -5 V
-7 V
0.6 -10 V
0.4
0.2
8 10
0
0
123
-I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4
3
3
2
25 °C
125 °C
2
1
1
00
012345
01234
-V GS [V]
-I D [A]
Rev 1.02
page 5
2007-04-10
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP322P.PDF ] | |
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