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PDF IR3103 Data sheet ( Hoja de datos )
| Número de pieza | IR3103 | |
| Descripción | Half-Bridge FredFET and Integrated Driver | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-96992 Rev.A
IR3103
Half-Bridge FredFET
Series
and Integrated Driver
0.75A, 500V
Description
The IR3103 is a gate driver IC integrated with a half bridge FredFET designed for motor drive applications
up to 180W (heatsink-less). The sleek and compact single-in-line package is optimized for electronic motor
control in appliance applications such as fans and compressors for refrigerators. The IR3103 offers an
extremely compact, high performance half-bridge inverter in a single isolated package for two-phase and
three-phase motor drivers.
Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power FredFET
technology (HEXFET® MOSFET with ultra-fast recovery body diode characteristics), enable efficient and
rugged single package construction. Propagation delays for the high and low side power FredFETs are
matched thanks to advanced IC technology.
Features
• Output Power FredFET in Half-Bridge Configuration
• High Side Gate Drive Designed for Bootstrap Operation
• Bootstrap Diode Integrated into Package
• Lower Power Level-Shifting Circuit
• Lower di/dt Gate Drive for Better Noise Immunity
• Excellent Latch Immunity on All Inputs and Outputs
• ESD Protection on All Leads
• Isolation 1500 VRMS min.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. Power dissipation is measured under board mounted and still air
conditions.
Parameter
Description
Max. Value
Units
VDS
VDD
IO (TA=25°C)
IO (TA=55°C)
IO (TA=25°C)
Pd
VISO
TJ
TS
TL
TS
Drain to Source Blocking Voltage
DC Bus Supply Voltage (No Switching Operation)
Continuous Output Current (1)
Continuous Output Current (1)
Pulsed Output Current (2)
Package Power Dissipation @TA ≤ 55°C (3)
Isolation Voltage (1min)
Junction Temperature (Power MOSFET)
Storage Temperature
Lead Temperature (soldering, 10 seconds)
Storage Temperature
500
500
0.7
0.6
2.7
1.4
1500
-40 to +150
-40 to +150
300
-40 to +150
V
V
A
A
A
W
VRMS
°C
°C
°C
°C
Note 1: See figure 3, fPWM=16kHz
Note 2: TP=100ms, other conditions as per Figure 3, fPWM=16kHz
Note 3: Single Device Operating
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Pin-Out Description
Pin
Name
Description
1 VCC Logic and Internal Gate Drive Supply
2 HIN Logic Input for High Side Gate Output
3 LIN Logic Input For Low Side Gate Output
4 NC Not Connected
5 VSS Logic Ground
6
COM
Low Side MOSFET Gate Return
7 NC Not Connected
8 VB High Side Gate Drive Floating Supply
9 VO Half Bridge Output
10 NC Not Connected
11 VDD High Voltage Supply
IR3103
VB VDD 1
8 11
VCC 1
HIN 2
LIN 3
VSS 5
IC Driver
6
COM
9 Vo
11
HIN
LIN
01
VO
0
10
VDD
1
1
Shoot-Through
condition
XX
X
Figure 1: Driver Input/Output relation
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Package Outline
27
-A-
8.6
-C-
1 11
2.54 [0.10]
10X
9X
1.35
1.05
9X
0.65
0.45
0.25 M C A S B
Note 1: Marking for pin 1 identification
Note 2: Product Part Number
Note 3: Lot and Date code marking
Dimensioning and Tolerancing per ANSY Y14.5M-1992
Controlling Dimensions: INCH
Dimensions are shown in millimeters [inches]
IR3103
-B-
3.35
3.15
1.80
1.20
0.25
0.40
0.20
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
04/05
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IR3103.PDF ] | |
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