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PDF MB85R256 Data sheet ( Hoja de datos )

Número de pieza MB85R256
Descripción Memory FRAM
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! MB85R256 Hoja de datos, Descripción, Manual

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FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256
DS05-13101-3E
s DESCRIPTIONS
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM MB85R256 is able to retain data without back-up battery.
The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly
outperforming FLASH memory and EEPROM in durability.
The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
s FEATURES
• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 3.0 V to 3.6 V
• Operating temperature range: 40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package
s PACKAGES
28-pin plastic SOP
28-pin plastic TSOP(1)
(FPT-28P-M17)
(FPT-28P-M03)

1 page




MB85R256 pdf
MB85R256
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Conditions
Value
Unit
Min Typ Max
Input leakage current | ILI | VIN = 0 V to VCC
  10 µA
Output leakage
current
| ILO |
VOUT = 0 V to VCC,
CE = VIH or OE = VIH
  10 µA
Operating power
supply current
CE = 0.2 V,
ICC Other Inputs = VCC 0.2 V/0.2 V,
5
10 mA
tRC (Min), Ii/o = 0 mA
Standby current
ISB CE VCC
5 100 µA
High level output
voltage
VOH IOH = − 100 µA
0.8 × VCC
V
Low level output
voltage
VOL IOL = 1.0 mA
  0.4 V
2. AC Characteristics
(1) Read cycle
Parameter
Read cycle time
CE active time
Read pulse width
Precharge time
Address setup time
Address hold time
CE access time
OE access time
CE output floating time
OE output floating time
Symbol
tRC
tCA
tRP
tPC
tAS
tAH
tCE
tOE
tHZ
tOHZ
(within recommended operating conditions)
Value
Min Max
Unit
235
150 10,000
150 10,000
85
0
ns
25
150
150
25
25
5

5 Page





MB85R256 arduino
MB85R256
(Continued)
28-pin plastic TSOP(1)
(FPT-28P-M03)
22
28
LEAD No. 1
7
INDEX
21
"A"
8
Details of "A" part
0.15(.006)
MAX
0.15(.006)
0.35(.014)
MAX
0.25(.010)
13.40±0.20
(.528±.008)
11.80±0.20
(.465±.008)
0.10(.004)
12.40±0.20
(.488±.008)
0.15±0.05
(.006±.002)
0.55(.0217)
TYP
0.50±0.10
(.020±.004)
8.00±0.20
(.315±.008)
7.15(.281)REF
1.10
+0.10
–0.05
.043
+.004
–.002
(Mounting height)
0.20±0.10
(.008±.004)
0(0)MIN
(STAND OFF)
0.09(.004) M
C 1997 FUJITSU LIMITED F28018S-5C-3
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
11

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