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PDF LND250 Data sheet ( Hoja de datos )

Número de pieza LND250
Descripción N-Channel Depletion-Mode MOSFET
Fabricantes Supertex Inc 
Logotipo Supertex  Inc Logotipo



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Supertex inc.
LND250
N-Channel Depletion-Mode
DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
ESD gate protection
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
General Description
The LND250 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertex’s lateral DMOS
technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplification.
Ordering Information
Part Number
Package Options
Packing
LND250K1-G*
TO-236AB (SOT-23) 3000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package
* Part is not recommended for new designs. Please refer to LND150K1-G.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source
Drain-to-gate
Gate-to-source
BVDSX
BVDGX
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Product Summary
BVDSX/BVDGX
(V)
RDS(ON)
(max)
500 1.0kΩ
IDSS
(min)
1.0mA
Pin Configuration
SOURCE
DRAIN
GATE
TO-236AB (SOT-23)
Product Marking
NDEW
W = Code for Week Sealed
= “Green” Packaging
TO-236AB (SOT-23)
Packages may or may not include the following marks: Si or
Doc.# DSFP-LND250
B012314
Supertex inc.
www.supertex.com

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