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Número de pieza LNC707PS
Descripción High Power Output Semiconductor Laser
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! LNC707PS Hoja de datos, Descripción, Manual

Semiconductor Laser
LNC707PS
High Power Output Semiconductor Laser
Overview
The LNC707PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. LNC707PS uses a small package, and is capable
of operating continuously at high temperatures with high output (60
mW). It can be used in a wide range of applications as a light source
for optical disk memory and optical information devices. In
particular, it can be used in making equipment portable due to its
low current operations.
Features
Low current operations : 70 mA (with 60 mW output)
High power output : 60 mW
Stable single horizontal mode oscillation
Small size package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Laser
PIN
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings
PO
VR
VR (PIN)
Pd (PIN)
Topr
60
2
30
100
–10 to +60
Tstg – 40 to +80
Unit
mW
V
V
mW
˚C
˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD PD
13
Junction plane
Reference plane
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2max.
3-ø0.45
2
1
ø2.0
3
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Horizontal direction
Radiation angle
Vertical direction
Differential efficiency
Reverse current (DC)
PIN photo current
Optical axis
accuracy
X direction
Y direction
Oscillation mode
Ith CW
IOP PO = 60mW
VOP PO = 60mW
λL PO = 60mW
θ//* PO = 60mW
θ* PO = 60mW
η PO = 55mW/I(60mW – 5mW)
IR VR (PIN) = 5V
IP PO = 60mW, VR (PIN) = 5V
θX PO = 60mW
θY PO = 50mW
Single horizontal mode
15
70
778
7
17
0.7
–2.0
–3.0
* θ// and θare the angles where the optical intencity is a half of its max. value.( half full angle )
typ
25
100
2.0
784
10
21
0.9
0.2
max Unit
35 mA
130 mA
2.5 V
790 nm
13 deg.
25 deg.
1.2 mW/mA
0.1 µA
mA
+2.0 deg.
+3.0 deg.
1

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