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PDF LNC703PS Data sheet ( Hoja de datos )

Número de pieza LNC703PS
Descripción Semiconductor Laser for LBPLaser Beam Printers
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! LNC703PS Hoja de datos, Descripción, Manual

Semiconductor Laser
LNC703PS
Semiconductor Laser for LBP(Laser Beam Printers)
Overview
The LNC703PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. This product is characterized by a low operating
current and low drooping, making it suitable for a wide range of
optical information equipment.
Features
Low current operations : 40 mA (with 12 mW output)
High output (15 mW) for increased printing speed
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD PD
13
Junction plane
Reference plane
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2max.
3-ø0.45
Stable single horizontal mode oscillation
2
Low astigmatic difference
Low drooping
1
ø2.0
3
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Laser
PIN
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings
PO 15
VR
VR (PIN)
Pd (PIN)
Topr
2
30
100
–10 to +60
Tstg – 40 to +80
Unit
mW
V
V
mW
˚C
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Horizontal direction
Radiation angle
Vertical direction
Differential efficiency
Reverse current (DC)
PIN photo current
Optical axis
accuracy
X direction
Y direction
Droop
Oscillation mode
Ith CW
IOP PO = 12mW
VOP PO = 12mW
λL PO = 12mW
θ//* PO = 12mW
θ* PO = 12mW
η PO = 9mW/I(12mW) – I(3mW)
IR VR (PIN) = 5V
IP PO = 12mW, VR (PIN) = 5V
θX PO = 12mW
θY PO = 12mW
Dr PO = 12mW, f = 600Hz, duty10% to 90%
Single horizontal mode
10
30
775
7
18
0.4
–2.0
–3.0
* θ// and θare the angles where the optical intencity is a half of its max. value. ( half full angle )
typ
20
40
2.0
785
10
25
0.7
0.3
4
max Unit
35 mA
70 mA
2.5 V
795 nm
12 deg.
32 deg.
1.0 mW/mA
0.1 µ A
mA
+2.0 deg.
+3.0 deg.
10 %
1

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