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Número de pieza | LNC702PS | |
Descripción | GaAlAs Semiconductor Laser | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LNC702PS (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Semiconductor Laser
LNC702PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Low drooping
Applications
Optical data processing devices
Laser beam printers
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Laser
PIN
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings
PO 5
VR 2
VR (PIN)
30
Pd (PIN)
60
Topr –10 to +60
Tstg – 40 to +85
Unit
mW
V
V
mW
˚C
˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD
1
Junction plane
PD
3
Reference plane
Reference slot
Reference plane
3-ø0.45
2
1
ø2.0
3
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Threshold current
Ith CW
15 25
Operating current
Operating voltage
Oscillation wavelength
Horizontal direction
Radiation angle
Vertical direction
PIN photo current
IOP
VOP
λL*2
θ//*1
θ⊥*1
IP
CW PO = 5mW
CW PO = 5mW
CW PO = 5mW
CW PO = 5mW
CW PO = 5mW
CW PO = 5mW, VR (PIN) = 5V
20
780
8
20
0.3
35
1.9
795
12
33
0.8
Reverse current (DC)
Optical axis
accuracy
X direction
Y direction
IR
θX
θY
VR (PIN) = 15V
CW PO = 5mW
CW PO = 5mW
–2.0
–3.0
*1 The radiation angle is indicated as half full angle.
*2 Sampling inspections are to be performed.
On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects.
max
40
50
2.5
810
15
45
1.6
0.1
+2.0
+3.0
Unit
mA
mA
V
nm
deg.
deg.
mA
µA
deg.
deg.
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LNC702PS.PDF ] |
Número de pieza | Descripción | Fabricantes |
LNC702PS | GaAlAs Semiconductor Laser | Panasonic Semiconductor |
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