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PDF NP55N04SUG Data sheet ( Hoja de datos )
| Número de pieza | NP55N04SUG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N04SUG
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The NP55N04SUG is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP55N04SUG
TO-252 (MP-3ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low input capacitance
Ciss = 3400 pF TYP. (VDS = 25 V)
(TO-252)
<R>
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±55
±220
77
1.2
175
−55 to +175
30
90
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
<R>
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.95
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17401EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
6
4
2
0
-100
VGS = 10 V
ID = 28 A
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
tr
td(on)
tf
1
0.1
1 10
ID - Drain Current - A
100
1000
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
10 0 V
1
0.1
0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
NP55N04SUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
8V
VGS
10
8
6
4
ID = 55 A
2
VDS Pulsed
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D17401EJ2V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NP55N04SUG.PDF ] | |
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