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Número de pieza | LNA2702L | |
Descripción | GaAs Bi-directional Infrared Light Emitting Diodes | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LNA2702L (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Infrared Light Emitting Diodes
LN59, LNA2702L
GaAs Bi-directional Infrared Light Emitting Diodes
For light source of VCR (VHS System)
LN59
4.0±0.2
ø2.5±0.2
Features
Two-way directivity
High-power output, high-efficiency : PO = 1.8 mW (min.)
Small resin package
Long lifetime, high reliability
Long lead wire type (LNA2702L)
2-0.8 max.
2-0.5±0.1
1
C0.5
2
2.54
Applications
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
LNA2702L
ø2.5±0.2 4.0±0.2
Unit : mm
1.8±0.2
2-R1.25±0.1
0.5±0.1
1: Anode
2: Cathode
1.8±0.2
2-R1.25±0.1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 75
IF 50
IFP* 1
VR 3
Topr –25 to +85
Tstg – 40 to +100
Unit
mW
mA
A
V
˚C
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Radiant power
Peak emission wavelength
PO* IF = 50mA
λP IF = 20mA
Spectral half band width
∆λ IF = 20mA
Forward voltage (DC)
VF IF = 50mA
Reverse current (DC)
IR VR = 3V
Capacitance between pins
Ct VR = 0V, f = 1MHz
* Radiant power PO shows each value of radiant flux P1 and P2 in two directions.
2-0.8 max.
2-0.5±0.1
2-0.7 max.
0.5±0.1
1
C0.5
2-0.5±0.1
2
2.54
1: Anode
2: Cathode
min typ max Unit
1.8 mW
950 nm
50 nm
1.3 1.5
V
10 µA
35 pF
P1 P2
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LNA2702L.PDF ] |
Número de pieza | Descripción | Fabricantes |
LNA2702L | GaAs Bi-directional Infrared Light Emitting Diodes | Panasonic Semiconductor |
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