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Número de pieza | LNA2606L | |
Descripción | GaAlAs on GaAs Infrared Light Emitting Diode | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LNA2606L (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Infrared Light Emitting Diodes
LNA2606L
GaAlAs on GaAs Infrared Light Emitting Diode
For optical control systems
s Features
• High-power output, high-efficiency: PO = 9 mW min.
• Emitted light spectrum suited for silicon photodetectors
• Ultra-miniature, thin side-view type package
• Long lifetime, high reliability
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Ratings
Power dissipation
PD 80
Forward current (DC)
IF 50
Pulse forward current *
IFP 1
Reverse voltage (DC)
VR 3
Operating ambient temperature Topr
−25 to +85
Storage temperature
Tstg −40 to +100
Note) *: f = 100 Hz, Duty Cycle = 0.1%
Unit
mW
mA
A
V
°C
°C
Unit: mm
3.0±0.3
φ1.1
R0.5
1.95±0.25
1.4±0.2
0.9 0.5
2− 0.5±0.15
0.3±0.15
21
2.54
1: Anode
2: Cathode
s Electro-Optical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
PO IF = 50 mA
λP IF = 50 mA
∆λ IF = 50 mA
VF IF = 50 mA
IR VR = 3 V
Ct VR = 0 V, f = 1 MHz
θ The angle in which radiant intencity is 50%
min
9
typ max
19
940
50
1.3 1.6
10
35
20
Unit
mW
nm
nm
V
µA
pF
°
1
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet LNA2606L.PDF ] |
Número de pieza | Descripción | Fabricantes |
LNA2606L | GaAlAs on GaAs Infrared Light Emitting Diode | Panasonic Semiconductor |
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