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PDF LN65 Data sheet ( Hoja de datos )
| Número de pieza | LN65 | |
| Descripción | GaAs Infrared Light Emitting Diode | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LN65 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Infrared Light Emitting Diodes
LN65
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 5.5 mW (typ.)
Good radiant power output linearity with respect to input current
Suited for use in high-speed modulation
Infrared light emission close to monochromatic light :
λP = 950 nm (typ.)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 160
IF 100
IFP* 1.5
VR 3
Topr –25 to +85
Tstg – 40 to +100
Unit
mW
mA
A
V
˚C
˚C
ø3.5±0.2
4.5±0.3
Unit : mm
4.2±0.3
2.3 1.9
2-0.98±0.2
2-0.45±0.15
0.45±0.15
2.54
R1.75
1.2
12
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
PO IF = 100mA
4.3 5.5
mW
λP IF = 100mA
950 nm
∆λ IF = 100mA
50 nm
VF IF = 100mA
1.3 1.6
V
IR VR = 3V
10 µA
Ct VR = 0V, f = 1MHz
50 pF
θ The angle in which radiant intencity is 50% 35 deg.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LN65.PDF ] | |
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