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PDF LN52 Data sheet ( Hoja de datos )
| Número de pieza | LN52 | |
| Descripción | GaAs Infrared Light Emitting Diode | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LN52 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Infrared Light Emitting Diodes
LN52
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 6 mW (typ.)
Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light : λP = 950 nm
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 160
IF 100
IFP* 2
VR 3
Topr –25 to +85
Tstg –30 to +100
Unit
mW
mA
A
V
˚C
˚C
Unit : mm
2-ø0.45±0.05
21
2.54±0.25
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
PO IF = 100mA
3.5 6
mW
λP IF = 100mA
950 nm
∆λ IF = 100mA
50 nm
VF IF = 100mA
1.25 1.6
V
IR VR = 3V
10 µA
Ct VR = 0V, f = 1MHz
50 pF
tr
tf
IFP = 100mA
1 µs
1 µs
θ The angle in which radiant intencity is 50%
100
deg.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LN52.PDF ] | |
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