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PDF 2SK4035 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4035 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
FEATURES
• Low input capacitance
Ciss = 74 pF TYP.
• Low on-state resistance
RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)
• Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4035
2SK4035-A Note
SC-96 (Mini Mold Thin Type)
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external
electrode and other parts.)
Marking: XP
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) Note2
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
250
±30
±0.5
±2.0
0.2
1.25
150
−55 to +150
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
3
12
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
1. Gate
2. Source
3. Drain
EQUIVALENT CIRCUIT
Drain
Body
Gate
V
Diode
V
A Gate
A
Protection Source
Diode
W
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17447EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
1 page  
2SK4035
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
ID = 0.25 A
7 Pulsed
6
5
4
3 VGS = 10 V
2
1
0
-75 -25 25
75 125 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
VGS = 10 V
VDD = 125 V
RG = 10 Ω
10 td(on)
tr
td(off)
tf
1
0.1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
1
0.1
0.01
0
VGS = 0 V
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
10 Coss
VGS = 0 V
f = 1 MHz
Crss
1
0.01
0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
200
150
100
50
0
0
VDD = 200 V
125 V
50 V
10
8
6
VGS
4
VDS 2
ID = 0.5 A
0
12345
QG - Gate Charge - nC
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1
1
IF - Diode Forward Current - A
10
Data Sheet D17447EJ1V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK4035.PDF ] | |
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