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PDF SFF75N08M Data sheet ( Hoja de datos )
| Número de pieza | SFF75N08M | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | SSDI | |
| Logotipo |  |
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www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254 and TO-254Z
Note 1: maximum current limited by package
configuration
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-254 (M)
SFF75N08M
SFF75N08Z
55 AMP (note 1) /75 Volts
8.5 mO
N-Channel Trench Gate MOSFET
Features:
• Trench gate technology for high cell density
• Lowest ON-resistance in the industry
• Enhanced operating temperature range
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• Enhanced replacement for IRF7MS2907
• TX, TXV, S-Level screening available
• Improved (RDS(ON) QG) figure of merit
@ TC = 25ºC
@ TC = 125ºC
@ TC = 25ºC
@ TC = 125ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
Symbol
VDSS
VGS
ID1
ID2
ID3
ID4
IAR
EAR
PD
TOP & TSTG
R0JC
Value
75
±20
55 (note 1)
55 (note 1)
175
75
75
280
210
-55 to +175
0.7
(typ 0.55)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
TO-254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0021A
DOC
1 page | ||
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SFF75N08M | N-Channel Power MOSFET / Transistor | SSDI |
| SFF75N08Z | N-Channel Power MOSFET / Transistor | SSDI |
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