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PDF MB84VP24491HK-70 Data sheet ( Hoja de datos )

Número de pieza MB84VP24491HK-70
Descripción 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
Fabricantes Fujitsu Media Devices 
Logotipo Fujitsu Media Devices Logotipo



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SPANSIONTM MCP
Data Sheet
September 2003
This document specifies SPANSIONTM memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSIONTM product. Future routine
revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSIONTM memory
solutions.

1 page




MB84VP24491HK-70 pdf
MB84VP24491HK-70
s PIN ASSIGNMENT
(Top View)
Marking Side
A10
N.C.
A1
N.C.
B10 F10 G10 L10 M10
N.C.
N.C. N.C.
N.C. N.C.
D9 E9 F9 G9 H9 J9
A15 A21 CE1f A16 N. C. VSS
C8 D8 E8 F8 G8 H8 J8 K8
A11 A12 A13 A14 N.C. DQ15 DQ7 DQ14
C7 D7 E7 F7 G7 H7 J7 K7
A8 A19 A9 A10 DQ6 DQ13 DQ12 DQ5
B6 C6 D6 E6
H6 J6 K6 L6
N.C.
WE CE2r A20
DQ4
VCCr
N.C.
N.C.
B5 C5 D5 E5
H5 J5 K5 L5
N.C. WP/ACC RESET RY/BY
DQ3
VCCf
DQ11
N.C.
C4 D4 E4 F4 G4 H4 J4 K4
LB UB A18 A17 DQ1 DQ9 DQ10 DQ2
C3 D3 E3 F3 G3 H3 J3 K3
A7
A6
A5
A4
VSS
OE
DQ0
DQ8
D2 E2 F2 G2 H2 J2
A3
A2
A1
A0
CE0f
CE1r
B1 C1
F1 G1
L1 M1
N.C.
N.C.
N.C. N.C.
N.C. N.C.
(BGA-73P-M03)
4

5 Page





MB84VP24491HK-70 arduino
MB84VP24491HK-70
(Continued)
Parameter
Sym-
bol
Conditions
Value
Unit
Min Typ Max
Input Low Level
VIL
–0.3
— VCC × 0.2 *6 V
Input High Level
VIH — VCC × 0.8 — VCC+ 0.2 *6 V
Voltage for Sector Protection, and
Temporary Sector Unprotection
(RESET) *4
VID
11.5
12
12.5
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration *4
VACC
8.5 9.0 9.5 V
Output Low Voltage Level
VOLf
VOLr
VCCf = VCCf Min,
IOL = 0.1 mA
VCCr = VCCr Min,
IOL = 1.0 mA
Flash
FCRAM
— VCCf × 0.15 V
— 0.4 V
Output High Voltage Level
VOHf
VOHr
VCCf = VCCf Min,
IOH = –0.1 mA
VCCr = VCCr Min,
IOH = –0.5 mA
Flash VCCf × 0.85
FCRAM 2.4
—V
—V
Flash Low VCCf Lock-Out Voltage
VLKO
2.3 2.4 2.5 V
*1: The ICC current listed includes both the DC operating current and the frequency dependent component.
*2: ICC active while Embedded Algorithm (program or erase) is in progress.
*3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4: Applicable for only VCCf applying.
*5: Embedded Algorithm (program or erase) is in progress. (@5 MHz)
*6: VCC indicates lower of VCCf or VCCr.
*7: FCRAM Characteristics are measured after following POWER-UP timing.
*8: IOUT depends on the output load conditions.
10

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