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PDF STFV4N150 Data sheet ( Hoja de datos )
| Número de pieza | STFV4N150 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STFV4N150
N-channel 1500V - 5Ω - 4A - TO-220FH
Very high voltage PowerMESH™ Power MOSFET
General features
Type
STFV4N150
VDSS RDS(on) ID Pw
1500V <7Ω 4A 40W
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
■ Fully plastic TO-220 package
■ Creepage distance path is > 4mm
Description
www.DataSheet4U.com
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics. The creepage path is
what makes this package unique from TO-220FP.
The creepage distance path between each lead
and between the leads and the heatsink has been
increased to >4.0mm, making this package met
all stringent safety norms in high voltage
applications.
Applications
■ Switching application
Order codes
Part number
STFV4N150
Marking
FV4N150
3
2
1
TO-220FH
Internal schematic diagram
Package
TO-220FH
Packaging
Tube
March 2007
Rev 4
1/13
www.st.com
13
1 page  
STFV4N150
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 750V, ID = 2A,
RG = 4.7Ω, VGS = 10V
(see Figure 14)
Min. Typ. Max. Unit
35 ns
30 ns
45 ns
45 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD = 45V (see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD = 45V, Tj = 150°C
(see Figure 19)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min Typ. Max Unit
4
12
2
510
3
12
650
4
12.6
A
A
V
ns
µC
A
ns
µC
A
5/13
5 Page 
STFV4N150
Package mechanical data
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
L8
L9
MIN.
4.4
2.5
2.5
0.45
0.75
1.3
1.3
4.95
2.4
10
28.6
9.8
15.9
9
14.5
mm
TYP.
16
3.4
2.4
MAX.
4.6
2.7
2.75
0.7
1
1.8
1.8
5.2
2.7
10.4
30.6
10.6
16.4
9.3
15
MIN.
0.173
0.098
0.098
0.017
0.030
0.051
0.051
0.195
0.094
0.393
1.126
0.385
0.626
0.354
0.570
inch
TYP.
0.630
0.134
0.094
MAX.
0.181
0.106
0.108
0.027
0.039
0.070
0.070
0.204
0.106
0.409
1.204
0.417
0.645
0.366
0.590
P011W
11/13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STFV4N150.PDF ] | |
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