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PDF APTM50UM19S Data sheet ( Hoja de datos )
| Número de pieza | APTM50UM19S | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APTM50UM19S
Single switch
Series & parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 19mΩ max @ Tj = 25°C
ID = 163A @ Tc = 25°C
SK
S
G
www.DataSheet4U.com
CR1
Q1
Application
D
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Low stray inductance
- M6 power connectors
- M4 signal connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
163
122
652
±30
19
1136
46
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
1 page  
APTM50UM19S
Typical Performance Curve
0.12
0.1
0.08
0.06
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.04 0.3
0.02
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
700
600
500 VGS=10&15V
8V
7.5V
400
300
200
100
0
0
7V
6.5V
6V
5.5V
5 10 15 20 25
VDS, Drain to Source Voltage (V)
1.20
1.15
1.10
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 81.5A
VGS=10V
1.05
1.00
VGS=20V
0.95
0.90
0.85
0.80
0
100 200 300
ID, Drain Current (A)
400
Transfert Characteristics
500
VDS > ID(on)xRDS(on)MAX
400 250µs pulse test @ < 0.5 duty cycle
300
200
100
0
0
TJ=25°C
TJ=125°C
TJ=-55°C
1234567
VGS, Gate to Source Voltage (V)
8
DC Drain Current vs Case Temperature
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
5–7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTM50UM19S.PDF ] | |
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