(PDF) SS8050LT1 Datasheet

Número de pieza	SS8050LT1
Descripción	TRANSISTOR
Fabricantes	Jiangsu Changjiang Electronics
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES SOT 23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 Collector current W Tamb=25 ICM : 1.5 Collector-base voltage A V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 Parameter Symbol unless otherwise specified Test conditions MIN TYP Unit : mm MAX UNIT Collector-base breakdown voltage www.DataSheet4U.com Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO Ic= 100 A IE=0 Ic= 0.1mA IB=0 IE=100 A IC=0 40 25 5 V V V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 A Collector cut-off current Emitter cut-off current ICEO VCB=20V , IE=0 IEBO VEB= 5V , IC=0 0.1 A 0.1 A DC current gain Collector-emitter saturation voltage hFE(1) hFE(2) VCE(sat) VCE=1V, IC= 100m A VCE=1V, IC= 800mA IC=800 mA, IB= 80m A 120 40 350 0.5 V Base-emitter saturation voltage Transition frequency CLASSIFICATION OF hFE(1) VBE( s at) fT IC=800 mA, IB= 80m A VCE=10V, IC= 50mA f=30MHz 100 1.2 V MHz DEVICE MARKING: 8050LT1=Y1 1 page

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PDF SS8050LT1 Data sheet ( Hoja de datos )