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PDF 2SD1898 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1898 | |
| Descripción | POWER TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
*High VCEO= 80V
*High IC= 1A (DC)
*Good hFE linearity.
*Low VCE(sat)
*Complements the 2SB1260.
1
SOT-89
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current(DC)
Ic
Collector Current(PULSE)*1
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Collector Power Dissipation*2
Pc
Collector Power Dissipation*2
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
*1 Duty=/1/2,Pw=200ms
*2 When mounted on a 40*40*0.7 mm ceramic board.
1:EMITTER 2:COLLECTOR 3:BASE
RATING
100
80
5
1
2
0.5
2
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Base Breakdown Voltage
BVCBO Ic= 50μA
100
Collector Emitter Breakdown Voltage BVCEO Ic= 1mA
Emitter Base Breakdown Voltage
BVEBO IE=50μA
80
5
Collector Cut-Off Current
ICBO VCB=80V, IE=0A
Emitter Cut-Off Current
IEBO VEB=4V , IC=0A
DC Current Transfer Ratio
hFE VCE=3V,Ic= 0.5A
82
Collector-Emitter Saturation Voltage VCE(sat) Ic=500mA,IB= 20mA
Transition Frequency
Output Capacitance
CLASSIFICATION OF hFE
fT VCE= 10V, IE= -50 mA, f=100MHz
Cob VCB= 10V, IE= 0 A, f=1MHz
RANK
P
Q
RANGE
82-180
120-270
TYP MAX
1
1
390
0.15 0.4
100
20
R
180-390
UNIT
V
V
V
μA
μA
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R208-030,A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD1898.PDF ] | |
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