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PDF STB45NF3LL Data sheet ( Hoja de datos )
| Número de pieza | STB45NF3LL | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP45NF3LL - STP45NF3LLFP
STB45NF3LL
N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D2PAK
STripFET II™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP45NF3LL
STP45NF3LLFP
STB45NF3LL
30 V
30 V
30 V
<0.018Ω
<0.018Ω
<0.018Ω
45 A
45 A
27 A
s TYPICAL RDS(on) = 0.014Ω @4.5V
s OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
“Single Feature Size™” strip-based process. The
resulting transistor shows the best trade-off be-
tween on-resistance ang gate charge. When used
as high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Viso
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
November 2002
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
TO-220/D2PAK
TO-220FP
30
30
± 16
45 27
32 19
180 108
70 25
0.46 0.167
241
-- 2500
– 55 to 175
(1) Starting Tj= 25°C, ID= 22.5A, VDD= 24V
Unit
V
V
V
A
A
A
W
W/°C
mJ
V
°C
1/11
1 page  
Gate Charge vs Gate-source Voltage
STP45NF3LL - STB45NF3LL
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Tj
5/11
5 Page 
STP45NF3LL - STB45NF3LL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STB45NF3LL.PDF ] | |
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