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PDF STB45N10L Data sheet ( Hoja de datos )
| Número de pieza | STB45N10L | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB45N10L
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STB45N10L
VDSS
100 V
RDS(on)
< 0.036 Ω
ID
45 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.028 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
s LOW LEAKAGE CURRENT
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
123
I2PAK
TO-262
3
1
D2PAK
TO-263
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
100
100
± 15
45
32
180
150
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/6
1 page  
STB45N10L
DIM.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
TO-263 (D2PAK) MECHANICAL DATA
MIN.
4.3
2.49
0.7
1.25
0.45
1.21
9
10
4.88
15
1.27
1.4
mm
TYP.
MAX.
4.6
2.69
0.93
1.4
0.6
1.36
9.35
10.28
5.28
15.85
1.37
1.75
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.354
0.393
0.192
0.590
0.050
0.055
inch
TYP.
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.054
0.068
L2
L
L3
E
A
C2
D
B2
B
G
A1
C
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STB45N10L.PDF ] | |
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