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PDF STGW39NC60VD Data sheet ( Hoja de datos )
| Número de pieza | STGW39NC60VD | |
| Descripción | N-CHANNEL IGBT | |
| Fabricantes | ST Microelectronics | |
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General features
STGW39NC60VD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESH™ IGBT
PRELIMINARY DATA
Type
VCES
VCE(sat)
(Max)@ 25°C
IC
@100°C
STGW39NC60VD 600V
<2.5V
40A
■ Low CRES / CIES ratio (no cross conduction
susceptibility)
■ High frequency operation
■ Very soft ultra fast recovery anti parallel diode
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “V” identifies a
familyoptimized for high frequency application.
Applications
■ High frequency inverters, ups
■ Motor drivers
■ Induction heating
TO-247
Internal schematic diagram
Order codes
Part number
STGW39NC60VD
Marking
GW39NC60VD
Package
TO-247
Packaging
Tube
July 2006
Rev 4
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
1 page  
STGW39NC60VD
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test condictions Min. Typ. Max. Unit
td(on)
tr
(di/dt)onf
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=25°C (see Figure 15)
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=125°C (see Figure 15)
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=25°C (see Figure 15)
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=125°C (see Figure 15)
33
13
2500
32
14
2280
33
178
65
68
238
128
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min Typ. Max Unit
Eon (1)
Eoff(2)
Ets
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 17)
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
333
537
870
618
1125
1743
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
µJ
µJ
µJ
µJ
µJ
µJ
Table 7. Collector-emitter diode
Symbol
Parameter
Vf Forward on-voltage
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
Test condictions
Min Typ. Max Unit
If = 15A
If = 15A, Tj = 125°C
1.6 2.8
1.4
V
V
If = 15A, VR = 40 V,
Tj = 25°C, di/dt =100A/µs
(see Figure 18)
45
56
2.55
ns
nC
A
If = 15A, VR = 40V,
Tj = 125°C,di/dt =100A/µs
(see Figure 18)
100
290
5.8
ns
nC
A
5/13
5 Page 
STGW39NC60VD
Package mechanical data
DIM.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
øP
øR
S
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA
mm.
TYP
5.45
18.50
5.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
11/13
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