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PDF STD790AT4 Data sheet ( Hoja de datos )

Número de pieza STD790AT4
Descripción Low Voltage PNP Transistor
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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STD790AT4
Medium Current, High Performance, Low Voltage
PNP Transistor
General features
Very low Collector to Emitter saturation voltage
D.C. Current gain, hFE >100
3A continuous collector current
40V breakdown voltage (V(BR)CER)
Surgace mounting DPAK(TO-252) power
package in tape & reel packing
In compliance with the 2002/93/EC European
Directive
Description
The device in manufactured in low voltage PNP
Planar Technology by using a “Base Island”
layout. The resulting transistor shows exceptional
high gain performance coupled with very low
saturation voltage.
Applications
Power management in portable equipment
Voltage regulation in bias supply circuits
Switching regulator in battery charger
applications
Heavy load driver
1
DPAK
(TO-252)
3
Internal schematic diagram
Order codes
Part Number
STD790AT4
Marking
D790A
Package
DPAK
Packing
Tape & reel
March 2006
Rev 2
1/10
www.st.com
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STD790AT4 pdf
STD790AT4
Electrical characteristics
Table 3.
Symbol
ft
Electrical characteristics
Parameter
Test Conditions
Transition frequency
IC = -50mA
f = 50MHz
VCE = -5V
Min. Typ. Max. Unit
100 MHz
Resistive load
td Delay time
tr Rise time
ts Storage time
tf Fall time
IC = -3A
VCC = -20V
IB1 = -IB2 = -60mA
(see figure 7)
180 220
160 210
250 300
80 100
ns
ns
ns
ns
Note (2) Pulsed duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 1. DC current gain
Figure 2. DC current gain
Figure 3. Collector-emitter saturation Figure 4. Base-emitter saturation
voltage
voltage
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