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PDF STD38NF03L Data sheet ( Hoja de datos )
| Número de pieza | STD38NF03L | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STD38NF03L
N - CHANNEL 30V - 0.013 Ω - 38A TO-252
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD38NF03L 30 V
< 0.019 Ω
38 A
s TYPICAL RDS(on) = 0.013 Ω
s OPTIMIZED FOR HIGH SWTICHING
OPERATIONS
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VG S
ID(*)
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
30
30
± 20
38
27
152
45
0.3
-65 to 175
175
( *)Value limited by the package
March 2000
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/6
1 page  
DIM.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
STD38NF03L
TO-252 (DPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
0.6
mm
TYP.
0.8
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.023
inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
H
DETAIL ”A”
L2 D
DETAIL ”A”
L4
0068772-B
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STD38NF03L.PDF ] | |
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