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PDF MSD42SWT1 Data sheet ( Hoja de datos )
| Número de pieza | MSD42SWT1 | |
| Descripción | NPN Silicon General Purpose High Voltage Transistor | |
| Fabricantes | ON Semiconductor | |
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MSD42SWT1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
300
300
6.0
150
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD 150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 300 − Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO 300 − Vdc
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IE = 0)
V(BR)EBO 6.0 − Vdc
Collector-Base Cutoff Current
(VCB = 300 Vdc, IE = 0)
ICBO
− 0.1 mA
Emitter−Base Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
IEBO
− 0.1 mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
hFE1
hFE2
25 200
40 −
−
Collector-Emitter Saturation Voltage
(Note 2) (IC = 200 mAdc,
IB = 2.0 mAdc)
VCE(sat) − 0.5 Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
1
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
D4 M G
G
1
D4 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MSD42SWT1 SC−70/SOT−323 3000/Tape & Reel
MSD42SWT1G SC−70/SOT−323 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MSD42SWT1/D
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MSD42SWT1.PDF ] | |
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