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Número de pieza | APT40GP60J | |
Descripción | POWER MOS 7 IGBT | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
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APT40GP60J
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 400V, 25A
• 200 kHz operation @ 400V, 16A
• SSOA rated
EE
G C SOT-227
ISOTOP®
C"UL Recognized"
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT40GP60J
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
86
40
160
160A @ 600V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
600
3 4.5 6
Volts
2.2 2.7
2.1
250
2500
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
50
10
Coes
Cres
0
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT40GP60J
180
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.45
0.40 0.9
0.35
0.7
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
0.5
Note:
t1
0.3
t2
Duty Factor D = t1/t2
0.1 Peak TJ = PDM x ZθJC + TC
0.05
SINGLE PULSE
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Junction
temp. ( ”C)
RC MODEL
0.109
0.0107F
Power
(Watts)
0.180
0.149F
Case temperature
0.151
1.22F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
210
100
50 Fmax = min(fmax1, fmax 2 )
f max 1
=
t d (on )
+
0.05
t r + t d(off )
+
tf
TJ = 125°C
TC = 75°C
D = 50 %
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
VCE = 400V
RG = 5 Ω
10
Pdiss
=
TJ − TC
R θJC
10 20 30 40 50 60
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APT40GP60J.PDF ] |
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