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PDF PMD9010D Data sheet ( Hoja de datos )
| Número de pieza | PMD9010D | |
| Descripción | MOSFET Driver | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMD9010D
MOSFET driver
Rev. 01 — 20 November 2006
Product data sheet
1. Product profile
1.1 General description
Two NPN transistors and high-speed switching diode connected in totem pole
configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic
package.
1.2 Features
I Two general-purpose transistors and one high-speed switching diode as driver
I Totem pole configuration
I Application-optimized pinout
I Internal connections to minimize layout effort
I Space-saving solution
I Reduces component count
1.3 Applications
I MOSFET driver
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
Diode (D1)
open base
single pulse;
tp ≤ 1 ms
- - 45 V
- - 0.1 A
- - 0.2 A
IF forward current
VF forward voltage
- - −0.2 A
IF = −200 mA [1] - - −1.1 V
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page  
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NXP Semiconductors
PMD9010D
MOSFET driver
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10 0.01
0
006aaa920
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10 0.01
0
006aaa921
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD9010D_1
Product data sheet
Rev. 01 — 20 November 2006
© NXP B.V. 2006. All rights reserved.
5 of 16
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NXP Semiconductors
PMD9010D
MOSFET driver
1
006aaa933
1
006aaa934
VCEsat
(V)
10−1
(1)
(2)
(3)
VCEsat
(V)
10−1
(1)
(2)
(3)
10−2
10−1
1
10 102 103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 15. TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
8. Test information
10−2
10−1
1
10 102 103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 16. TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
VCC
RC
oscilloscope (probe)
450 Ω
VI
R1
R2
TR2
VO
D1
TR1
DUT
(probe)
oscilloscope
450 Ω
IC = 0.05 A; IB = 2.5 mA; R1 = 1 kΩ; R2 = 1 kΩ; RC = 180 Ω
Fig 17. Test circuit for switching times
006aaa935
PMD9010D_1
Product data sheet
Rev. 01 — 20 November 2006
© NXP B.V. 2006. All rights reserved.
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11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMD9010D.PDF ] | |
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