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PDF SUR50N03-06P Data sheet ( Hoja de datos )
| Número de pieza | SUR50N03-06P | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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SUR50N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0065 @ VGS = 10 V
30 0.0095 @ VGS = 4.5 V
TO-252
Reverse Lead DPAK
ID (A)b
84b
59b
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Optimized for Low-Side Synchronous
Rectifier Operation
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
− Desktop CPU Core
D Synchronous Rectifiers
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUR50N03-06P—E3
SUR50N03-06P-T4—E3 (altrenate tape orientation)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C
TC = 25_C
TC = 100_C
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
27
84b
59b
100
25
88
8.3a
−55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t v 10 sec
Steady State
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Based on maximum allowable junction temperature, package limitation current is 50 A.
RthJA
RthJC
Document Number: 72182
S-32693—Rev. A, 19-Jan-04
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SUR50N03-06P.PDF ] | |
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