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Datasheet SLN10A-5SA-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
SLN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SLN-186 | 3.5 Volt 50 Ohm LNA MMIC Amplifier
Product Description
Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz. The SLN-186 needs  Stanford Microdevices amplifier | | |
| 2 | SLN-286 | 3Volt 50 Ohm LNA MMIC Amplifier
Product Description
Stanford Microdevices’ SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-3.5 GHz. The SLN-286 needs Stanford Microdevices amplifier | | |
| 3 | SLN10A-5SA | Power Module
Features
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Low output ripple 10 amp output current 92 % efficiency Low 0.5 ˝ profile Power good Remote sense
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Adjustable Vout Short-circuit protection with auto-restart Fast transient response High-temperature operation Remote ena  Bourns Electronic Solutions data | | |
| 4 | SLN1N60C | N-Channel MOSFET SLN1N60C
600V N-Channel MOSFET
General Description
This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy p  SL SEMI mosfet | |
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