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PDF STB5NB60 Data sheet ( Hoja de datos )
| Número de pieza | STB5NB60 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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® STB5NB60
N - CHANNEL 600V - 1.8Ω - 5A - I2PAK/D2PAK
PowerMESH™ MOSFET
TYPE
ST B5N B60
VDSS
600 V
RDS(on)
< 2.0 Ω
ID
5A
s TYPICAL RDS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
123
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
I2PAK
TO-262
(suffix ”-1”)
D2PAK
TO-263
(Suffix ”T4”)
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
INTERNAL SCHEMATIC DIAGRAM
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APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
DataShee
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
600
600
± 30
5
3.1
20
100
0.8
4.5
-65 to 150
150
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
January 2000
1/9
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Normalized Gate Threshold Voltage vs
Temperature
STB5NB60
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STB5NB60.PDF ] | |
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