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PDF MRA0610-18A Data sheet ( Hoja de datos )
| Número de pieza | MRA0610-18A | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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MRA0610-18A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRA0610-18A is Designed for
Class C, Common Base Wideband
Large Signal Amplifier Applications
From 600 MHz to 1.0 GHz, With
PACKAGE STYLE MRA .25
Internal Compensating Matching
Network and Diffused Ballast
MILLIMETERS
DIM MIN
MAX
Resistors.
A 8.00 8.38
B 0.08 0.15
C 1.98 2.34
MAXIMUM RATINGS
D 1.40 1.65
E 4.32 5.08
IC 2.5 A (CONT)
F 18.77 19.03
G 5.33 5.84
VCES
www.DataSheet4U.comTJ
50 V
-65 OC to +200 OC
H 6.17 6.43
J 7.74 8.64
K 14.10 14.35
L 3.17 3.43
INCHES
MIN
O.351
0.003
0.078
0.055
0.170
0.739
0.210
0.243
0.210
0.555
0.125
MAX
0.330
0.006
0.092
0.065
0.200
0.749
0.230
0.253
0.240
0.565
0.135
TSTG
θJC
-65 OC to +150 OC
4.0 OC/W
1 = Collector 2 = Emitter
3 = Base
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCES
IC = 100 mA
BVEBO
IE = 1.25 mA
ICBO
VCB = 28 V
hFE VCE = 5.0 V IC = 500 mA
NONE
MINIMUM TYPICAL MAXIMUM UNITS
50 V
3.5 V
2.5 mA
10 100 ---
Cob VCB = 28 V
f = 1.0 MHz
14
pF
GPB
VCE = 28 V Pout = 18 W f = 600 MHz & 1.0 GHz
7.8
ηc 50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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