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PDF STP3NC90Z Data sheet ( Hoja de datos )
| Número de pieza | STP3NC90Z | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP3NC90Z - STP3NC90ZFP
STB3NC90Z-1
N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC90Z/FP
900V
< 3.5Ω
3.5 A
STB3NC90Z-1
900V
< 3.5Ω
3.5 A
s TYPICAL RDS(on) = 3.2Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
TO-220
3
2
1
TO-220FP
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
123
I2PAK
(Tabless TO-220)
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
www.DataSheet4U.comof single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
January 2001
Value
Unit
STP(B)3NC90Z(-1) STP3NC90ZFP
900 V
900 V
± 25 V
3.5
3.5(*)
A
2.2
2.2(*)
A
14 14 A
100 35 W
0.8 0.28 W/°C
±50 mA
2.5 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD ≤3.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*).Limited only by maximum temperature allowed
1/11
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1 page  
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Transconductance
STP3NC90Z/FP/STB3NC90Z-1
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STP3NC90Z/FP/STB3NC90Z-1
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STP3NC90Z.PDF ] | |
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