PDF MRF141 Data sheet ( Hoja de datos )

Número de pieza	MRF141
Descripción	N-CHANNEL BROADBAND RF POWER MOSFET
Fabricantes	Motorola Semiconductors
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No Preview Available ! www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 28 V: Output Power — 150 W Gain — 18 dB (22 dB Typ) Efficiency — 40% • Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability D Order this document by MRF141/D MRF141 150 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET G MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case S Symbol VDSS VDGO VGS ID PD Tstg TJ Symbol RθJC CASE 211–11, STYLE 2 Value 65 65 ± 40 16 300 1.71 – 65 to +150 200 Max 0.6 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. www.DataSheet4U.com REV 8 ©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA MRF141 1 1 page www.DataSheet4U.com Zo = 10 Ω VDD = 28 V IDQ = 250 mA Pout = 150 W PEP ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 15 7.5 4 Zin 2 30 100 30 150 100 2 f = 175 MHz ZOL* f = 175 MHz Figure 11. Input and Output Impedances BIAS 0 – 12 V RF INPUT R1 C4 C1 + C5 L1 R3 C2 C3 R2 RFC1 + 28 V L4 C10 + – C11 DUT L3 L2 C9 RF OUTPUT C6 C7 C8 C1, C2, C8 — Arco 463 or equivalent C3 — 25 pF, Unelco C4 — 0.1 µF, Ceramic C5 — 1.0 µF, 15 WV Tantalum C6 — 25 pF, Unelco J101 C7 — 25 pF, Unelco J101 C9 — Arco 262 or equivalent C10 — 0.05 µF, Ceramic C11 — 15 µF, 35 WV Electrolytic L1 — 3/4″, #18 AWG into Hairpin L2 — Printed Line, 0.200″ x 0.500″ L3 — 7/8″, #16 AWG into Hairpin L4 — 2 Turns, #16 AWG, 5/16 ID RFC1 — 5.6 µH, Molded Choke RFC2 — VK200–4B R1 — 150 Ω, 1.0 W Carbon R2 — 10 kΩ, 1/2 W Carbon R3 — 120 Ω, 1/2 W Carbon Figure 12. 175 MHz Test Circuit (Class AB) www.DataSheet4U.com MOTOROLA RF DEVICE DATA MRF141 5 5 Page

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